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A Calibrated Memristor Model Implementation for an SR-Latch Based on CMOS-Memristor Technology

  • Universidad San Francisco de Quito

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

An SR-Latch based on CMOS-memristor technol-ogy has been implemented in LT-spice, employing memristors calibrated with experimental data. Initially, we analyzed the electrical behavior of HfO_2 -based ReRAMs to acquire key parameters essential for calibrating the memristor model. This calibration process generates the inherent variability reported for these devices. After, we build an OR gate with two calibrated memristors that, according to the analysis, work under the logical principles that govern the OR gate operation. Finally, the SR-Latch was implemented at the circuit level in LTspice. The outputs demonstrate that the latch exhibited a high accuracy, which implies that the memristor's variability does not affect the desired operation.

Original languageEnglish
Title of host publicationLASCAS 2024 - 15th IEEE Latin American Symposium on Circuits and Systems, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350381221
DOIs
StatePublished - 2024
Event15th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2024 - Punta del Este, Uruguay
Duration: 27 Feb 20241 Mar 2024

Publication series

NameLASCAS 2024 - 15th IEEE Latin American Symposium on Circuits and Systems, Proceedings

Conference

Conference15th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2024
Country/TerritoryUruguay
CityPunta del Este
Period27/02/241/03/24

Keywords

  • OR gate
  • ReRAM
  • SR-Latch
  • latch
  • variability

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