A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

L. M. Procel; F. Crupi; L. Trojman; J. Franco; B. Kaczer

doi:10.1109/TDMR.2015.2511085

A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

L. M. Procel
, F. Crupi
, L. Trojman
, J. Franco
, B. Kaczer

University of Calabria

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

Original language	English
Article number	7362163
Pages (from-to)	98-100
Number of pages	3
Journal	IEEE Transactions on Device and Materials Reliability
Volume	16
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2015.2511085
State	Published - Mar 2016

Keywords

Defect-centric distribution
channel hot carrier degradation
temperature analysis

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10.1109/TDMR.2015.2511085

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title = "A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs",

abstract = "The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.",

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AU - Procel, L. M.

AU - Crupi, F.

AU - Trojman, L.

AU - Franco, J.

AU - Kaczer, B.

PY - 2016/3

Y1 - 2016/3

N2 - The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

AB - The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

KW - Defect-centric distribution

KW - channel hot carrier degradation

KW - temperature analysis

UR - https://www.scopus.com/pages/publications/84964378077

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EP - 100

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

M1 - 7362163

ER -

A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

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Keywords

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