A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

L. M. Procel; F. Crupi; J. Franco; L. Trojman; B. Kaczer; N. Wils; H. Tuinhout

doi:10.1016/j.mee.2015.04.055

A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

L. M. Procel^*
, F. Crupi
, J. Franco
, L. Trojman
, B. Kaczer
, N. Wils
, H. Tuinhout

^*Corresponding author for this work

University of Calabria
Imec
NXP Semiconductors

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.

Original language	English
Pages (from-to)	72-74
Number of pages	3
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.055
State	Published - 1 Nov 2015

Keywords

Channel hot carrier degradation
Defect-Centric distribution
Variability

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10.1016/j.mee.2015.04.055

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title = "A Defect-Centric perspective on channel hot carrier variability in nMOSFETs",

abstract = "In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.",

keywords = "Channel hot carrier degradation, Defect-Centric distribution, Variability",

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T1 - A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

AU - Procel, L. M.

AU - Crupi, F.

AU - Franco, J.

AU - Trojman, L.

AU - Kaczer, B.

AU - Wils, N.

AU - Tuinhout, H.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.

AB - In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.

KW - Channel hot carrier degradation

KW - Defect-Centric distribution

KW - Variability

UR - https://www.scopus.com/pages/publications/84928253140

U2 - 10.1016/j.mee.2015.04.055

DO - 10.1016/j.mee.2015.04.055

M3 - Artículo

AN - SCOPUS:84928253140

SN - 0167-9317

VL - 147

SP - 72

EP - 74

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

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Keywords

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