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A temperature-dependent pre-exponential factor in Efros-Shklovskii variable range hopping conduction in p-type CuInTe2

  • C. Quiroga
  • , R. Oentrich
  • , I. Bonalde*
  • , E. Medina D.
  • , S. M. Wasim
  • , G. Marín
  • *Corresponding author for this work
  • Instituto Venezolano de Investigaciones Científicas
  • Universidad de los Andes Mérida

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

We report on the temperature dependence of the electrical resistivity down to 0.4 K in a single crystal sample of CuInTe2 with a hole concentration at room temperature of 2.32 × 1018 cm-3. Mott type variable range hopping (VRH) conduction is observed in the temperature range from 90 to 53 K. A crossover to Efros-Shklovskii (ES) type VRH conduction with a temperature-dependent pre-exponential factor, i.e. ρ = ρ0Tαexp(T0/T)0.5 with α = 0.18, is seen below 25 K. This is the first time that a crossover from Mott to ES VRH with a pre-exponential factor has been reported.

Original languageEnglish
Pages (from-to)292-293
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume18
Issue number1-3
DOIs
StatePublished - May 2003
Externally publishedYes
Event23rd International Conference on Low Temperature Physics - Hiroshima, Japan
Duration: 20 Aug 200227 Aug 2002

Keywords

  • Efros-Shklovskii
  • Mott
  • Pre-exponential factor
  • Resistivity
  • Variable range hopping

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