Advanced physics-based modeling of TFETs: A comprehensive geometric and material perspective

This work presents a material-centric, physics-based model that predicts the electrical behavior of Tunnel Field-Effect Transistors (TFETs) by incorporating both band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT) mechanisms. The model accounts for key material-dependent parameters, such as variations in effective mass and trap density, enabling a comprehensive analysis of TFET performance. Validation against experimental data from both conventional silicon high-k metal gate and III–V polar TFETs demonstrates the model's predictive accuracy. This approach provides valuable insights into performance trade-offs, serving as a robust tool for the design, optimization, and material selection of next-generation TFET technologies.