@inproceedings{8457edf883ca47f089c34098d734d6a3,
title = "All-GaN Integrated Overcurrent Protection Circuit Using only Enhancement-mode p-GaN Devices",
abstract = "This paper presents the design of a new topology for an Overcurrent Protection (OCP) Integrated Circuit (IC), developed entirely in p-Gallium Nitride (p-GaN) technology using only Enhancement-mode (E-mode) High Electron Transistor Mobility (HEMT) devices. The OCP circuit consists of a current-mirror sensor, a comparator, a latch, and an auxiliary logic circuit. The complexity of this design lies in the absence of P-Type devices. To overcome this limitation, Resistor Transistor Logic (RTL) and Push-Pull buffers are employed. The all-GaN OCP circuit was sized to minimise the OCP response time. The GaN power Integrated Circuit (GaN-IC) includes a 650V/10A HEMT operating at 1 MHz. The OCP performance was tested through pre-and post-layout simulation under load and temperature variations. The response time of the OCP, including parasitic extraction is 34 ns for a current limit of 12 A. The OCP-IC demonstrates a 6\% faster response time compared to the state-of-The-Art.",
keywords = "GaN Comparator, GaN-IC, GaN-OCP, Gallium Nitride, Overcurrent Protection Circuit, p-GaN HEMT",
author = "Nataly Pozo and Procel, \{Luis Miguel\} and Lionel Trojman",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024 ; Conference date: 02-09-2024 Through 06-09-2024",
year = "2024",
doi = "10.1109/SBCCI62366.2024.10703983",
language = "Ingl{\'e}s",
series = "Proceedings - 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024",
}