@inproceedings{b7931229a88947c5bc7685eeaf9f6f21,
title = "Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters",
abstract = "The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the principal full-wave rectifier circuits. Rectifier circuits are fundamental part of energy harvester systems. We have chosen the conventional, the gate cross-coupled and the fully cross-coupled rectifiers topologies for circuit simulation. Simulations are carried on Custom-Compiler and HSPICE platform from Synopsys. We measure the average value factor, the ripple voltage and the ripple factor. We obtain that FinFET and Tunnel-FET technologies are the best candidates to work in low voltage. As well, we analyze that the fully cross-coupled topology is the one that best behaves as pure rectifier. In addition, we show that all technologies behave as a combination of rectifier and filter in high frequency.",
keywords = "FinFET, Tunnel-FET, energy harvester, full-wave rectifier, planar CMOS",
author = "Procel, \{L. M.\} and J. Paredes and L. Trojman",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Latin American Electron Devices Conference, LAEDC 2019 ; Conference date: 24-02-2019 Through 27-02-2019",
year = "2019",
month = may,
day = "14",
doi = "10.1109/LAED.2019.8714738",
language = "Ingl{\'e}s",
series = "Latin American Electron Devices Conference, LAEDC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Latin American Electron Devices Conference, LAEDC 2019",
}