@inproceedings{09fb0124c0c64ffba71569635cd69c79,
title = "Design of a Gate Driver Based-on E-mode p-GaN HEMTs Handling 650V/10A GaN Power Device",
abstract = "This paper presents the design of a monolithically integrated Gallium Nitride (GaN)-IC gate driver based on Enhancement-mode p-GaN HEMT technology. The design uses 650V GaN-on-SOI Process Designing Kit (PDK). The design complexity of this technology lies in the absence of p-type devices. Consequently, Resistor-Transistor Logic (RTL) inverters and Push-Pull Buffers are introduced instead of a complementary logic. To effectively handle the power device (650V/10A) switching, the gate driver is sized to achieve 7V in the output. To validate the performance of the proposed gate driver, transistor-level and post-layout simulations are carried out considering an input signal of 2MHz. Turn-on/turn-off time (3.77ns/2.32ns), overall circuit efficiency (99.3%) and temperature variation effects are analysed.",
keywords = "Enhancement-mode, GaN-IC, Gallium Nitride, Gate Driver, Integrated Circuit IC, p-GaN HEMT",
author = "Nataly Pozo and Procel, {Luis Miguel} and Lionel Trojman",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 22nd IEEE Interregional NEWCAS Conference, NEWCAS 2024 ; Conference date: 16-06-2024 Through 19-06-2024",
year = "2024",
doi = "10.1109/NewCAS58973.2024.10666324",
language = "Ingl{\'e}s",
series = "2024 22nd IEEE Interregional NEWCAS Conference, NEWCAS 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "333--337",
booktitle = "2024 22nd IEEE Interregional NEWCAS Conference, NEWCAS 2024",
}