Enhancement-mode p-GaN Comparators for power applications

Nataly Pozo, Luis Miguel Prócel, Lionel Trojman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the design of three new comparators circuits for power applications using Enhancement-mode p-GaN HEMT Process Design Kit (PDK) developed by IMEC. The design challenge in this technology is the lack of P-type devices, therefore diode-connected structures with N-type devices are introduced as pull-up devices. Comparators are monolithicaly integrated with 200V/10A power p-GaN HEMTs. The output voltage of the comparators is set to 6V to turn-on the power device suitably. To verify the performance of the circuits, lMHz of input signal frequency is selected. Relevant parameters such as rising, falling and propagation delay times, together with the power-delay product are discussed. For rated output voltage and frequency, the lower rise/fall/propagation delay times achieved are 0.8310.8911.14 ns. Transistor-level simulations and proof of concept of each proposed structure are carried out considering temperature and frequency variation.

Original languageEnglish
Title of host publicationPRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages197-200
Number of pages4
ISBN (Electronic)9798350303209
DOIs
StatePublished - 2023
Event18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023 - Valencia, Spain
Duration: 18 Jun 202321 Jun 2023

Publication series

Name2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

Conference

Conference18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023
Country/TerritorySpain
CityValencia
Period18/06/2321/06/23

Keywords

  • HEMT
  • comparator
  • gallium nitride
  • gate driver
  • p-GaN

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