High-field transport investigation for 25-nm MOSFETs with 0.64-nm EOT: Intrinsic performance and parasitic effects

Lionel Trojman; Luigi Pantisano; Lars Åke Ragnarsson

doi:10.1109/TED.2012.2193402

High-field transport investigation for 25-nm MOSFETs with 0.64-nm EOT: Intrinsic performance and parasitic effects

Lionel Trojman^*
, Luigi Pantisano
, Lars Åke Ragnarsson

^*Corresponding author for this work

Universidad San Francisco de Quito USFQ

Interuniversitair Micro-Elektronica Centrum

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Low- and high-field transports are investigated for HfO ₂ -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) (EOT = 6.4-8.4 Å) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO ₂-related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices (L _MET = 25nm). However, the on-state current (I _ON) for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I _ON-performance improvement for CMOS scaling also with new architectures and substrates.

Original language	English
Article number	6194299
Pages (from-to)	1856-1862
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	7
DOIs	https://doi.org/10.1109/TED.2012.2193402
State	Published - 2012

Keywords

Backscattering
HfO
cryogenic temperature
high-field transport
high-κ/metal-gate MOSFET
mobility
on-state current
quasi-ballistic
short-channel devices
ultrathin equivalent oxide thickness (UTEOT)

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10.1109/TED.2012.2193402

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title = "High-field transport investigation for 25-nm MOSFETs with 0.64-nm EOT: Intrinsic performance and parasitic effects",

abstract = "Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) (EOT = 6.4-8.4 {\AA}) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2-related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20\% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices (L MET = 25nm). However, the on-state current (I ON) for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON-performance improvement for CMOS scaling also with new architectures and substrates.",

keywords = "Backscattering, HfO, cryogenic temperature, high-field transport, high-κ/metal-gate MOSFET, mobility, on-state current, quasi-ballistic, short-channel devices, ultrathin equivalent oxide thickness (UTEOT)",

author = "Lionel Trojman and Luigi Pantisano and Ragnarsson, \{Lars {\AA}ke\}",

note = "Funding Information: Manuscript received July 27, 2011; revised January 20, 2012, March 5, 2012, and March 21, 2012; accepted March 23, 2012. Date of publication May 3, 2012; date of current version June 15, 2012. This work was supported in part by the Universidad San Francisco de Quito (USFQ) under Travel Grant USFQ Fondo Big Bang a Dolly. The review of this paper was arranged by Editor D. Esseni.",

year = "2012",

doi = "10.1109/TED.2012.2193402",

language = "Ingl{\'e}s",

volume = "59",

pages = "1856--1862",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

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AU - Trojman, Lionel

AU - Pantisano, Luigi

AU - Ragnarsson, Lars Åke

N1 - Funding Information: Manuscript received July 27, 2011; revised January 20, 2012, March 5, 2012, and March 21, 2012; accepted March 23, 2012. Date of publication May 3, 2012; date of current version June 15, 2012. This work was supported in part by the Universidad San Francisco de Quito (USFQ) under Travel Grant USFQ Fondo Big Bang a Dolly. The review of this paper was arranged by Editor D. Esseni.

PY - 2012

Y1 - 2012

N2 - Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) (EOT = 6.4-8.4 Å) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2-related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices (L MET = 25nm). However, the on-state current (I ON) for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON-performance improvement for CMOS scaling also with new architectures and substrates.

AB - Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) (EOT = 6.4-8.4 Å) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2-related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices (L MET = 25nm). However, the on-state current (I ON) for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON-performance improvement for CMOS scaling also with new architectures and substrates.

KW - Backscattering

KW - HfO

KW - cryogenic temperature

KW - high-field transport

KW - high-κ/metal-gate MOSFET

KW - mobility

KW - on-state current

KW - quasi-ballistic

KW - short-channel devices

KW - ultrathin equivalent oxide thickness (UTEOT)

UR - https://www.scopus.com/pages/publications/84862678315

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DO - 10.1109/TED.2012.2193402

M3 - Artículo

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SN - 0018-9383

VL - 59

SP - 1856

EP - 1862

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 6194299

ER -

High-field transport investigation for 25-nm MOSFETs with 0.64-nm EOT: Intrinsic performance and parasitic effects

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