@inproceedings{a97e3b5fc21744a396179069df2ee521,
title = "Model for resistive switching in bipolar Hafnium-based memories",
abstract = "A new simple model for set-reset operation in resistive random access memories (ReRAM) is presented. In this model, the switching occurs because of changes in a small region of the conductive filament that can be represented by a set of vertical resistors. These resistors can change their conduction mechanism between trap-assisted tunneling (TAT) and ohmic conduction according to the applied external voltage and a switching probability. The model has been calibrated with hafnium-based experimental data, and the results show an excellent agreement between model simulation and experimental response.",
author = "Silvana Guitarra and Laurent Raymond and Lionel Trojman",
note = "Publisher Copyright: {\textcopyright} 2019 Author(s).; 6th IUPAP International Conference on Women in Physics, ICWIP 2017 ; Conference date: 16-07-2017 Through 20-07-2017",
year = "2019",
month = jun,
day = "3",
doi = "10.1063/1.5110123",
language = "Ingl{\'e}s",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Chandralekha Singh and Geraldine Cochran and Nicola Wilkin",
booktitle = "Women in Physics",
}