@inproceedings{7a2cb28487284a26912ac9c9684a0ba5,
title = "ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric",
abstract = "The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-state stress conditions is studied for a 650 V GaN-on-Si technology. Reliability metric techniques previously used in MOS-HEMTs are applied in this work due to a similar MIS gate stack architecture in GET-SBDs. Here, the density of traps is analyzed in GET structures where the dielectric is either Si3N4 (nitride-based) or a stack of Al2O3/SiO2 (oxide-based). Statistical analysis across two wafers indicates some systematic differences in turn-on voltage degradation depending on wafer location, likely caused by process-related variations. Under 1000 s stress time and ON-state voltage, the number of trapped charges in nitride-based dielectric devices keeps increasing. This suggests an ongoing dielectric degradation. On the other hand, Al2O3/SiO2 dielectric devices with an Al-based interfacial layer (IL) exhibit less process-induced variability across the wafer along with a lower density of trapped charges compared with nitride-based dielectric diodes under the same stress conditions suggesting better reliability and process improvement.",
keywords = "GaN, Schottky diode, de-trapping, interfacial layer, nitride, on-state, oxide, trapping rate",
author = "Eliana Acurio and Lionel Trojman and \{De Jaeger\}, Brice and Benoit Bakeroot and Stefaan Decoutere",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405163",
language = "Ingl{\'e}s",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
}