On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

L. A. Ragnarsson; J. Mitard; T. Kauerauf; A. De Keersgieter; T. Schram; E. Rohr; N. Collaert; M. Jurczak; S. H. Hong; J. Tseng; W. E. Wang; L. Trojman; K. K. Bourdelle; B. Y. Nguyen; P. Absil; T. Y. Hoffmann

doi:10.1109/VTSA.2011.5872255

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

L. A. Ragnarsson^*
, J. Mitard
, T. Kauerauf
, A. De Keersgieter
, T. Schram
, E. Rohr
, N. Collaert
, M. Jurczak
, S. H. Hong
, J. Tseng
, W. E. Wang
, L. Trojman
, K. K. Bourdelle
, B. Y. Nguyen
, P. Absil
, T. Y. Hoffmann

^*Corresponding author for this work

Universidad San Francisco de Quito USFQ

Interuniversitair Micro-Elektronica Centrum
IMEC
Samsung
Taiwan Semiconductor Manufacturing Company
Soitec S.A.
Soitec-USA

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (T_inv) as a result of stronger charge and surface roughness scattering at thinner SiO_x interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm²/Vs) at T_inv12.5. In the UTBOX-FDSOI device architecture, a positive back gate bias provides a strong enhancement in electron mobility. In SiGe-QW pFET devices, a 150% improvement in hole-mobility is observed with low thermal budget laser-anneal (LA).

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	116-117
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872255
State	Published - 2011
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 25 Apr 2011 → 27 Apr 2011

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	25/04/11 → 27/04/11

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10.1109/VTSA.2011.5872255

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Ragnarsson, L. A., Mitard, J., Kauerauf, T., De Keersgieter, A., Schram, T., Rohr, E., Collaert, N., Jurczak, M., Hong, S. H., Tseng, J., Wang, W. E., Trojman, L., Bourdelle, K. K., Nguyen, B. Y., Absil, P., & Hoffmann, T. Y. (2011). On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 116-117). Article 5872255 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872255

Ragnarsson, L. A. ; Mitard, J. ; Kauerauf, T. et al. / On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics. Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. pp. 116-117 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{7914629fc85e472ea22fe668a43e3cdc,

title = "On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics",

abstract = "The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (Tinv) as a result of stronger charge and surface roughness scattering at thinner SiOx interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at Tinv12.5. In the UTBOX-FDSOI device architecture, a positive back gate bias provides a strong enhancement in electron mobility. In SiGe-QW pFET devices, a 150\% improvement in hole-mobility is observed with low thermal budget laser-anneal (LA).",

author = "Ragnarsson, \{L. A.\} and J. Mitard and T. Kauerauf and \{De Keersgieter\}, A. and T. Schram and E. Rohr and N. Collaert and M. Jurczak and Hong, \{S. H.\} and J. Tseng and Wang, \{W. E.\} and L. Trojman and Bourdelle, \{K. K.\} and Nguyen, \{B. Y.\} and P. Absil and Hoffmann, \{T. Y.\}",

year = "2011",

doi = "10.1109/VTSA.2011.5872255",

language = "Ingl{\'e}s",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "116--117",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

}

Ragnarsson, LA, Mitard, J, Kauerauf, T, De Keersgieter, A, Schram, T, Rohr, E, Collaert, N, Jurczak, M, Hong, SH, Tseng, J, Wang, WE, Trojman, L, Bourdelle, KK, Nguyen, BY, Absil, P & Hoffmann, TY 2011, On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872255, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 116-117, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872255

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics. / Ragnarsson, L. A.; Mitard, J.; Kauerauf, T. et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 116-117 5872255 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

AU - Ragnarsson, L. A.

AU - Mitard, J.

AU - Kauerauf, T.

AU - De Keersgieter, A.

AU - Schram, T.

AU - Rohr, E.

AU - Collaert, N.

AU - Jurczak, M.

AU - Hong, S. H.

AU - Tseng, J.

AU - Wang, W. E.

AU - Trojman, L.

AU - Bourdelle, K. K.

AU - Nguyen, B. Y.

AU - Absil, P.

AU - Hoffmann, T. Y.

PY - 2011

Y1 - 2011

N2 - The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (Tinv) as a result of stronger charge and surface roughness scattering at thinner SiOx interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at Tinv12.5. In the UTBOX-FDSOI device architecture, a positive back gate bias provides a strong enhancement in electron mobility. In SiGe-QW pFET devices, a 150% improvement in hole-mobility is observed with low thermal budget laser-anneal (LA).

AB - The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (Tinv) as a result of stronger charge and surface roughness scattering at thinner SiOx interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at Tinv12.5. In the UTBOX-FDSOI device architecture, a positive back gate bias provides a strong enhancement in electron mobility. In SiGe-QW pFET devices, a 150% improvement in hole-mobility is observed with low thermal budget laser-anneal (LA).

UR - https://www.scopus.com/pages/publications/79959992843

U2 - 10.1109/VTSA.2011.5872255

DO - 10.1109/VTSA.2011.5872255

M3 - Contribución a la conferencia

AN - SCOPUS:79959992843

SN - 9781424484928

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 116

EP - 117

BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

Y2 - 25 April 2011 through 27 April 2011

ER -

Ragnarsson LA, Mitard J, Kauerauf T, De Keersgieter A, Schram T, Rohr E et al. On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 116-117. 5872255. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872255

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

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