Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer, J. Franco, M. Cho, T. Grasser, Ph J. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G. GroesenekenA. Thean

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

30 Scopus citations

Abstract

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

Original languageEnglish
Title of host publication2015 IEEE International Reliability Physics Symposium, IRPS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3B51-3B56
ISBN (Electronic)9781467373623
DOIs
StatePublished - 26 May 2015
EventIEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
Duration: 19 Apr 201523 Apr 2015

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2015-May
ISSN (Print)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
Country/TerritoryUnited States
CityMonterey
Period19/04/1523/04/15

Keywords

  • Bias Temperature Instability (BTI)
  • Channel Hot Carriers (CHC)
  • FinFETs
  • Time-Dependent Variability

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