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Pre-factor effect in the efros-shklovskii variable range hopping regime

  • Miguel Rodríguez*
  • , Ismardo Bonalde
  • , Ernesto Medina
  • *Corresponding author for this work
  • Instituto Venezolano de Investigaciones Científicas

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We investigate the effect of the pre-factor of the Miller-Abrahams resistors on the macroscopic transport in Anderson insulators. Using the Mott hopping optimization procedure, including corrections due to pre-factors of the wavefunction overlap, we obtain more general expressions for the temperature T dependence of the typical hopping length and the resistivity in the Efros-Shklovskii (ES) regime. In this regime the expressions lead to the standard ES law in the case of T lower than the characteristic temperature TES, and to a meaningful pre-exponential dominated hopping regime when T is of the order of or larger than TES.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1466-1467
Number of pages2
DOIs
StatePublished - 2006
Externally publishedYes
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 10 Aug 200617 Oct 2006

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country/TerritoryUnited States
CityOrlando, FL
Period10/08/0617/10/06

Keywords

  • Efros-Shklovskii regime
  • Preexponential effects
  • Variable range hopping

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