Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. Franco; B. Kaczer; S. Mukhopadhyay; P. Duhan; P. Weckx; Ph J. Roussel; T. Chiarella; L. A. Ragnarsson; L. Trojman; N. Horiguchi; A. Spessot; D. Linten; A. Mocuta

doi:10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. Franco, B. Kaczer, S. Mukhopadhyay, P. Duhan, P. Weckx, Ph J. Roussel, T. Chiarella, L. A. Ragnarsson, L. Trojman, N. Horiguchi, A. Spessot, D. Linten, A. Mocuta

Universidad San Francisco de Quito USFQ

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.3.1-15.3.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838422
State	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

Access to Document

10.1109/IEDM.2016.7838422

Cite this

Franco, J., Kaczer, B., Mukhopadhyay, S., Duhan, P., Weckx, P., Roussel, P. J., Chiarella, T., Ragnarsson, L. A., Trojman, L., Horiguchi, N., Spessot, A., Linten, D., & Mocuta, A. (2017). Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 15.3.1-15.3.4). Article 7838422 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838422

Franco, J. ; Kaczer, B. ; Mukhopadhyay, S. et al. / Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 15.3.1-15.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{1df77024ccad4f7292d73c3145bb2145,

title = "Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs",

abstract = "We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.",

author = "J. Franco and B. Kaczer and S. Mukhopadhyay and P. Duhan and P. Weckx and Roussel, {Ph J.} and T. Chiarella and Ragnarsson, {L. A.} and L. Trojman and N. Horiguchi and A. Spessot and D. Linten and A. Mocuta",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838422",

language = "Ingl{\'e}s",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "15.3.1--15.3.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

}

Franco, J, Kaczer, B, Mukhopadhyay, S, Duhan, P, Weckx, P, Roussel, PJ, Chiarella, T, Ragnarsson, LA, Trojman, L, Horiguchi, N, Spessot, A, Linten, D & Mocuta, A 2017, Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838422, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 15.3.1-15.3.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. / Franco, J.; Kaczer, B.; Mukhopadhyay, S. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 15.3.1-15.3.4 7838422 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

AU - Franco, J.

AU - Kaczer, B.

AU - Mukhopadhyay, S.

AU - Duhan, P.

AU - Weckx, P.

AU - Roussel, Ph J.

AU - Chiarella, T.

AU - Ragnarsson, L. A.

AU - Trojman, L.

AU - Horiguchi, N.

AU - Spessot, A.

AU - Linten, D.

AU - Mocuta, A.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

AB - We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

UR - http://www.scopus.com/inward/record.url?scp=85014457440&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2016.7838422

DO - 10.1109/IEDM.2016.7838422

M3 - Contribución a la conferencia

AN - SCOPUS:85014457440

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.3.1-15.3.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Franco J, Kaczer B, Mukhopadhyay S, Duhan P, Weckx P, Roussel PJ et al. Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 15.3.1-15.3.4. 7838422. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this