Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. Franco; B. Kaczer; S. Mukhopadhyay; P. Duhan; P. Weckx; Ph J. Roussel; T. Chiarella; L. A. Ragnarsson; L. Trojman; N. Horiguchi; A. Spessot; D. Linten; A. Mocuta

doi:10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. Franco
, B. Kaczer
, S. Mukhopadhyay
, P. Duhan
, P. Weckx
, Ph J. Roussel
, T. Chiarella
, L. A. Ragnarsson
, L. Trojman
, N. Horiguchi
, A. Spessot
, D. Linten
, A. Mocuta

Universidad San Francisco de Quito USFQ

Interuniversitair Micro-Elektronica Centrum
Indian Institute of Technology Bombay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.3.1-15.3.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838422
State	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

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10.1109/IEDM.2016.7838422

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Franco, J., Kaczer, B., Mukhopadhyay, S., Duhan, P., Weckx, P., Roussel, P. J., Chiarella, T., Ragnarsson, L. A., Trojman, L., Horiguchi, N., Spessot, A., Linten, D., & Mocuta, A. (2017). Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 15.3.1-15.3.4). Article 7838422 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838422

Franco, J. ; Kaczer, B. ; Mukhopadhyay, S. et al. / Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 15.3.1-15.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{1df77024ccad4f7292d73c3145bb2145,

title = "Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs",

abstract = "We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.",

author = "J. Franco and B. Kaczer and S. Mukhopadhyay and P. Duhan and P. Weckx and Roussel, \{Ph J.\} and T. Chiarella and Ragnarsson, \{L. A.\} and L. Trojman and N. Horiguchi and A. Spessot and D. Linten and A. Mocuta",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838422",

language = "Ingl{\'e}s",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Franco, J, Kaczer, B, Mukhopadhyay, S, Duhan, P, Weckx, P, Roussel, PJ, Chiarella, T, Ragnarsson, LA, Trojman, L, Horiguchi, N, Spessot, A, Linten, D & Mocuta, A 2017, Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838422, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 15.3.1-15.3.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. / Franco, J.; Kaczer, B.; Mukhopadhyay, S. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 15.3.1-15.3.4 7838422 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

AU - Franco, J.

AU - Kaczer, B.

AU - Mukhopadhyay, S.

AU - Duhan, P.

AU - Weckx, P.

AU - Roussel, Ph J.

AU - Chiarella, T.

AU - Ragnarsson, L. A.

AU - Trojman, L.

AU - Horiguchi, N.

AU - Spessot, A.

AU - Linten, D.

AU - Mocuta, A.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

AB - We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.

UR - https://www.scopus.com/pages/publications/85014457440

U2 - 10.1109/IEDM.2016.7838422

DO - 10.1109/IEDM.2016.7838422

M3 - Contribución a la conferencia

AN - SCOPUS:85014457440

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.3.1-15.3.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Franco J, Kaczer B, Mukhopadhyay S, Duhan P, Weckx P, Roussel PJ et al. Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 15.3.1-15.3.4. 7838422. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838422

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

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