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Study of the scaling and the temperature for RERAM cells using the QPC model

  • Université d'Aix Marseille

Research output: Contribution to journalArticlepeer-review

Abstract

This article describes the OXRAM cell operation for different areas and temperatures using the Quantum Point Contact (QPC) model. Based on the QPC model the RERAM cell is described by a potential barrier variation using 2 parameters. The systematic extraction of this parameter for experimental I-V curves leads to conclude that the OXRAM cell does not depend on the scaling area cell but the temperature seems to degrade the performance cell above all for RERAM cell with dimension under 100nm. Further the needed energy to form the cells is increasing with the area scaling.

Original languageEnglish
Article number7816999
Pages (from-to)4693-4698
Number of pages6
JournalIEEE Latin America Transactions
Volume14
Issue number12
DOIs
StatePublished - Dec 2016

Keywords

  • HfO2
  • QPC model
  • RERAM
  • Temperature
  • TiN
  • area scaling
  • high-κ

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