Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

D. Niebieskikwiat; E. E. Kaul; G. R. Pregliasco; J. E. Gayone; O. Grizzi; E. A. Sánchez

doi:10.1016/S0168-583X(02)00796-6

Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

D. Niebieskikwiat
, E. E. Kaul
, G. R. Pregliasco
, J. E. Gayone
, O. Grizzi
, E. A. Sánchez

Instituto Balseiro

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar⁺ bombardment. The irradiation was carried on normal to the surface with doses in the 1-60 × 10¹⁶ ions/cm² range. We observed a first generation of blisters at a critical dose around 3 × 10¹⁶ ions/cm², which flakes off at 19 × 10¹⁶ ions/cm², and a second generation of smaller blisters between 35 and 45 × 10¹⁶ ions/cm². Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar⁺ implantation. For doses greater than 20 × 10¹⁶ Ar⁺/cm² the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.

Original language	English
Pages (from-to)	305-311
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	193
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(02)00796-6
State	Published - Jun 2002
Externally published	Yes

Keywords

Atomic force microscopy
Ion implantation
Silicon
Surface structure, morphology roughness and topography

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10.1016/S0168-583X(02)00796-6

Cite this

Niebieskikwiat, D., Kaul, E. E., Pregliasco, G. R., Gayone, J. E., Grizzi, O., & Sánchez, E. A. (2002). Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 193(1-4), 305-311. https://doi.org/10.1016/S0168-583X(02)00796-6

@article{2947f20847204518b2890f715e3cff39,

title = "Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy",

abstract = "We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar+ bombardment. The irradiation was carried on normal to the surface with doses in the 1-60 × 1016 ions/cm2 range. We observed a first generation of blisters at a critical dose around 3 × 1016 ions/cm2, which flakes off at 19 × 1016 ions/cm2, and a second generation of smaller blisters between 35 and 45 × 1016 ions/cm2. Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar+ implantation. For doses greater than 20 × 1016 Ar+/cm2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.",

keywords = "Atomic force microscopy, Ion implantation, Silicon, Surface structure, morphology roughness and topography",

author = "D. Niebieskikwiat and Kaul, \{E. E.\} and Pregliasco, \{G. R.\} and Gayone, \{J. E.\} and O. Grizzi and S{\'a}nchez, \{E. A.\}",

note = "Funding Information: We acknowledge partial support from CONICET (423/98) and SECYT (PICTs 3-6325 and 3-4220).",

year = "2002",

month = jun,

doi = "10.1016/S0168-583X(02)00796-6",

language = "Ingl{\'e}s",

volume = "193",

pages = "305--311",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy. / Niebieskikwiat, D.; Kaul, E. E.; Pregliasco, G. R. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 193, No. 1-4, 06.2002, p. 305-311.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

AU - Niebieskikwiat, D.

AU - Kaul, E. E.

AU - Pregliasco, G. R.

AU - Gayone, J. E.

AU - Grizzi, O.

AU - Sánchez, E. A.

N1 - Funding Information: We acknowledge partial support from CONICET (423/98) and SECYT (PICTs 3-6325 and 3-4220).

PY - 2002/6

Y1 - 2002/6

N2 - We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar+ bombardment. The irradiation was carried on normal to the surface with doses in the 1-60 × 1016 ions/cm2 range. We observed a first generation of blisters at a critical dose around 3 × 1016 ions/cm2, which flakes off at 19 × 1016 ions/cm2, and a second generation of smaller blisters between 35 and 45 × 1016 ions/cm2. Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar+ implantation. For doses greater than 20 × 1016 Ar+/cm2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.

AB - We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar+ bombardment. The irradiation was carried on normal to the surface with doses in the 1-60 × 1016 ions/cm2 range. We observed a first generation of blisters at a critical dose around 3 × 1016 ions/cm2, which flakes off at 19 × 1016 ions/cm2, and a second generation of smaller blisters between 35 and 45 × 1016 ions/cm2. Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar+ implantation. For doses greater than 20 × 1016 Ar+/cm2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.

KW - Atomic force microscopy

KW - Ion implantation

KW - Silicon

KW - Surface structure, morphology roughness and topography

UR - https://www.scopus.com/pages/publications/0036609433

U2 - 10.1016/S0168-583X(02)00796-6

DO - 10.1016/S0168-583X(02)00796-6

M3 - Artículo

AN - SCOPUS:0036609433

SN - 0168-583X

VL - 193

SP - 305

EP - 311

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

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Keywords

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