A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel Trojman, Eliana Acurio, Brice De Jaeger, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

Resumen

A compact model based on the Lambert function is used to describe I-V-T characteristics of Schottky Barrier Diodes (SBDs) with gated-edge termination (GET) with either SiN or SiO/AlO as GET dielectric. Electrical parameters obtained from this model enable Schottky barrier height (SBH) assessment. It will be shown that fluctuations are about 17% in both cases. Similar interface state density (from ideality factor) is obtained which is consistent with previous work and validates this approach as an interesting method to model these GET-SBDs.

Idioma originalInglés
Número de artículo108778
PublicaciónSolid-State Electronics
Volumen210
DOI
EstadoPublicada - dic. 2023
Publicado de forma externa

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