A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel Trojman; Eliana Acurio; Brice De Jaeger; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot

doi:10.1016/j.sse.2023.108778

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel Trojman^*
, Eliana Acurio
, Brice De Jaeger
, Niels Posthuma
, Stefaan Decoutere
, Benoit Bakeroot

^*Autor correspondiente de este trabajo

Universidad San Francisco de Quito USFQ

ISEP
Universidad San Francisco de Quito
Escuela Politecnica Nacional
Interuniversitair Micro-Elektronica Centrum
Ghent University

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

1 Cita (Scopus)

Resumen

A compact model based on the Lambert function is used to describe I-V-T characteristics of Schottky Barrier Diodes (SBDs) with gated-edge termination (GET) with either SiN or SiO/AlO as GET dielectric. Electrical parameters obtained from this model enable Schottky barrier height (SBH) assessment. It will be shown that fluctuations are about 17% in both cases. Similar interface state density (from ideality factor) is obtained which is consistent with previous work and validates this approach as an interesting method to model these GET-SBDs.

Idioma original	Inglés
Número de artículo	108778
Publicación	Solid-State Electronics
Volumen	210
DOI	https://doi.org/10.1016/j.sse.2023.108778
Estado	Publicada - dic. 2023

Acceder al documento

10.1016/j.sse.2023.108778

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{886358ed5d674cf9923430d2bae038e7,

title = "A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination",

abstract = "A compact model based on the Lambert function is used to describe I-V-T characteristics of Schottky Barrier Diodes (SBDs) with gated-edge termination (GET) with either SiN or SiO/AlO as GET dielectric. Electrical parameters obtained from this model enable Schottky barrier height (SBH) assessment. It will be shown that fluctuations are about 17\% in both cases. Similar interface state density (from ideality factor) is obtained which is consistent with previous work and validates this approach as an interesting method to model these GET-SBDs.",

keywords = "AlGaN barrier, Compact model, Gated-Edge Termination, Lambert Function, Schottky Barrier Diode",

author = "Lionel Trojman and Eliana Acurio and \{De Jaeger\}, Brice and Niels Posthuma and Stefaan Decoutere and Benoit Bakeroot",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = dec,

doi = "10.1016/j.sse.2023.108778",

language = "Ingl{\'e}s",

volume = "210",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

AU - Trojman, Lionel

AU - Acurio, Eliana

AU - De Jaeger, Brice

AU - Posthuma, Niels

AU - Decoutere, Stefaan

AU - Bakeroot, Benoit

PY - 2023/12

Y1 - 2023/12

N2 - A compact model based on the Lambert function is used to describe I-V-T characteristics of Schottky Barrier Diodes (SBDs) with gated-edge termination (GET) with either SiN or SiO/AlO as GET dielectric. Electrical parameters obtained from this model enable Schottky barrier height (SBH) assessment. It will be shown that fluctuations are about 17% in both cases. Similar interface state density (from ideality factor) is obtained which is consistent with previous work and validates this approach as an interesting method to model these GET-SBDs.

AB - A compact model based on the Lambert function is used to describe I-V-T characteristics of Schottky Barrier Diodes (SBDs) with gated-edge termination (GET) with either SiN or SiO/AlO as GET dielectric. Electrical parameters obtained from this model enable Schottky barrier height (SBH) assessment. It will be shown that fluctuations are about 17% in both cases. Similar interface state density (from ideality factor) is obtained which is consistent with previous work and validates this approach as an interesting method to model these GET-SBDs.

KW - AlGaN barrier

KW - Compact model

KW - Gated-Edge Termination

KW - Lambert Function

KW - Schottky Barrier Diode

UR - https://www.scopus.com/pages/publications/85173609488

U2 - 10.1016/j.sse.2023.108778

DO - 10.1016/j.sse.2023.108778

M3 - Artículo

AN - SCOPUS:85173609488

SN - 0038-1101

VL - 210

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108778

ER -

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto