TY - JOUR
T1 - A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
AU - Procel, L. M.
AU - Crupi, F.
AU - Trojman, L.
AU - Franco, J.
AU - Kaczer, B.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2016/3
Y1 - 2016/3
N2 - The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.
AB - The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.
KW - Defect-centric distribution
KW - channel hot carrier degradation
KW - temperature analysis
UR - http://www.scopus.com/inward/record.url?scp=84964378077&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2015.2511085
DO - 10.1109/TDMR.2015.2511085
M3 - Artículo
AN - SCOPUS:84964378077
SN - 1530-4388
VL - 16
SP - 98
EP - 100
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 1
M1 - 7362163
ER -