A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

L. M. Procel; F. Crupi; L. Trojman; J. Franco; B. Kaczer

doi:10.1109/TDMR.2015.2511085

A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

L. M. Procel
, F. Crupi
, L. Trojman
, J. Franco
, B. Kaczer

University of Calabria

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

2 Citas (Scopus)

Resumen

The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

Idioma original	Inglés
Número de artículo	7362163
Páginas (desde-hasta)	98-100
Número de páginas	3
Publicación	IEEE Transactions on Device and Materials Reliability
Volumen	16
N.º	1
DOI	https://doi.org/10.1109/TDMR.2015.2511085
Estado	Publicada - mar 2016

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abstract = "The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.",

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AU - Crupi, F.

AU - Trojman, L.

AU - Franco, J.

AU - Kaczer, B.

PY - 2016/3

Y1 - 2016/3

N2 - The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

AB - The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

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KW - channel hot carrier degradation

KW - temperature analysis

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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

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