A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

L. M. Procel, F. Crupi, J. Franco, L. Trojman, B. Kaczer, N. Wils, H. Tuinhout

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

6 Citas (Scopus)


In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.

Idioma originalInglés
Páginas (desde-hasta)72-74
Número de páginas3
PublicaciónMicroelectronic Engineering
EstadoPublicada - 1 nov. 2015


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