TY - JOUR
T1 - A Defect-Centric perspective on channel hot carrier variability in nMOSFETs
AU - Procel, L. M.
AU - Crupi, F.
AU - Franco, J.
AU - Trojman, L.
AU - Kaczer, B.
AU - Wils, N.
AU - Tuinhout, H.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.
AB - In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavior, by using a set of more than 1000 nMOSFETs in 45 and 65 nm bulk planar CMOS technologies. The use of matching pairs enabled us to determine the intrinsic value of the CHC variability by mitigating extrinsic sources of variability. The average impact of a single charged trap, which is a quantitative indicator of the time-dependent variability, is practically independent of the stress time and stress channel voltage in single devices and in matching pairs, while it increases for a more scaled technology node.
KW - Channel hot carrier degradation
KW - Defect-Centric distribution
KW - Variability
UR - http://www.scopus.com/inward/record.url?scp=84928253140&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2015.04.055
DO - 10.1016/j.mee.2015.04.055
M3 - Artículo
AN - SCOPUS:84928253140
SN - 0167-9317
VL - 147
SP - 72
EP - 74
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -