@inproceedings{d5a5998fc760441eb623a05f7ecd7ea4,
title = "A phenomenological model of the resistive switching for Hf-based ReRAM devices",
abstract = " This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random Access Memories (ReRAM). A statistical analysis of the main electrical parameters of the set and reset switching is done and compared among devices of different areas. With this experimental evidence, a phenomenological model for the resistive switching mechanism in bipolar memories is proposed. This model not only captures the electrical response, but also explains the stochastic behavior reported in this kind of devices.",
keywords = "ReRAM, active region, model, percolation, resistive switching, simulation, stochastic",
author = "Silvana Guitarra and Lionel Trojman and Laurent Raymond",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 3rd IEEE Ecuador Technical Chapters Meeting, ETCM 2018 ; Conference date: 15-10-2018 Through 19-10-2018",
year = "2018",
month = dec,
day = "17",
doi = "10.1109/ETCM.2018.8580284",
language = "Ingl{\'e}s",
series = "2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018",
}