Unexpected VT-instability in PMOS was demonstrated for HfSiON with EOT ∼1nm. These traps were successfully identified as hole traps in the HfSiON bulk using a modified "leakage-free" CP technique. Hole trap density depends on the Hf- and N-profile in the film and significantly lowers the NBTI lifetime. Largest hole trap densities were found in thin Hf-rich films thus being a concern for further EOT scaling toward sub 1nm EOT. Additionally L-dependent hole trapping was found correlated with traps responsible of anomalous VT-roll-off.
|Número de artículo
|Número de páginas
|Digest of Technical Papers - Symposium on VLSI Technology
|Publicada - 2007
|Publicado de forma externa
|2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japón
Duración: 12 jun. 2007 → 14 jun. 2007