Advanced electrical characterization toward (sub) 1nm EOT HfSiON - Hole trapping in PFET and L-dependent effects

M. B. Zahid, L. Pantisano, R. Degraeve, M. Aoulaiche, L. Trojman, I. Ferain, E. San Andrés, G. Groeseneken, J. F. Zhang, M. Heyns, M. Jurczak, S. De Gendt

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Resumen

Unexpected VT-instability in PMOS was demonstrated for HfSiON with EOT ∼1nm. These traps were successfully identified as hole traps in the HfSiON bulk using a modified "leakage-free" CP technique. Hole trap density depends on the Hf- and N-profile in the film and significantly lowers the NBTI lifetime. Largest hole trap densities were found in thin Hf-rich films thus being a concern for further EOT scaling toward sub 1nm EOT. Additionally L-dependent hole trapping was found correlated with traps responsible of anomalous VT-roll-off.

Idioma originalInglés
Número de artículo4339715
Páginas (desde-hasta)32-33
Número de páginas2
PublicaciónDigest of Technical Papers - Symposium on VLSI Technology
DOI
EstadoPublicada - 2007
Publicado de forma externa
Evento2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japón
Duración: 12 jun. 200714 jun. 2007

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