@inproceedings{6bf50a84bb14417ea6bfcd3ae6c10535,
title = "Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy",
abstract = "A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-based ReRAM devices is presented. Five electrical parameters are extracted from experimental and intrinsic curves, and after, they are statistically analyzed and compared among devices of different areas. The results are interpreted by accounting for filamentary resistive switching operation. Finally, we propose a modification to the stochastic model for OxRAM memories presented in [1] to improve the simulation results in the reset region.",
keywords = "ReRAM, conductive filament, filamentary conduction, reset, stochastic model, switching, two-step transition",
author = "Silvana Guitarra and Lionel Trojman and Laurent Raymond and Martin Gavilanez",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 ; Conference date: 04-07-2022 Through 06-07-2022",
year = "2022",
doi = "10.1109/LAEDC54796.2022.9908218",
language = "Ingl{\'e}s",
series = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
}