Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy

Silvana Guitarra, Lionel Trojman, Laurent Raymond, Martin Gavilanez

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Resumen

A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-based ReRAM devices is presented. Five electrical parameters are extracted from experimental and intrinsic curves, and after, they are statistically analyzed and compared among devices of different areas. The results are interpreted by accounting for filamentary resistive switching operation. Finally, we propose a modification to the stochastic model for OxRAM memories presented in [1] to improve the simulation results in the reset region.

Idioma originalInglés
Título de la publicación alojada2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781665497671
DOI
EstadoPublicada - 2022
Evento2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 - Cancun, México
Duración: 4 jul. 20226 jul. 2022

Serie de la publicación

Nombre2022 IEEE Latin America Electron Devices Conference, LAEDC 2022

Conferencia

Conferencia2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
País/TerritorioMéxico
CiudadCancun
Período4/07/226/07/22

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