@inproceedings{126c3ac737ec4b7da0769107c6ee8565,
title = "Assessment of 10 nm Tunnel-FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits",
abstract = "The trade-offs of the Tunnel-FETs (TFETs) in terms of delay, energy per cycle, and noise margin are compared with 10 nm FinFETs for a wide voltage supply ranging from 200 to 600 mV with a specific focus on the ultra-low voltage domain. A calibration process is carried out to ensure the same off-current and extrinsic capacitance in both devices. The TFETs presented a high advantage in terms of delay as well as a penalty in energy consumed. As a result, the TFET circuits show a better Energy-Delay trade-off in voltages as low as 350 m V. This is explained by a larger capacitance caused by the nature of the intrinsic materials chosen of the device modelling.",
keywords = "Digital circuits, Energy-delay trade-off, FinFET, Tunnel-FET (TFET), Ultra-low voltage",
author = "Mateo Rend{\'o}n and Christian Cao and Kevin Land{\'a}zuri and Pr{\'o}cel, \{Luis Miguel\} and Lionel Trojman and Ramiro Taco",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Ecuador Technical Chapters Meeting, ETCM 2021 ; Conference date: 12-10-2021 Through 15-10-2021",
year = "2021",
month = oct,
day = "12",
doi = "10.1109/ETCM53643.2021.9590651",
language = "Ingl{\'e}s",
series = "ETCM 2021 - 5th Ecuador Technical Chapters Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Huerta, \{Monica Karel\} and Sebastian Quevedo and Carlos Monsalve",
booktitle = "ETCM 2021 - 5th Ecuador Technical Chapters Meeting",
}