Ballistic resistivity in aluminum nanocontacts

A. Hasmy, A. J. Pérez-Jiménez, J. J. Palacios, P. García-Mochales, J. L. Costa-Krämer, M. Díaz, E. Medina, P. A. Serena

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25 Citas (Scopus)

Resumen

We perform a representative series of semiclassical molecular dynamics simulations of aluminum nanocontact breakages, coupled to full quantum conductance calculations. This approach allows to obtain realistic conductance histograms of polyvalent species and understand the origin of their peaked structures. The results show that the conductance depends linearly on the contact minimum cross section for the geometrically favored nanocontact configurations. Valid in a broad range of conductance values, such relation suggests the definition of a transport parameter for the nanoscale, that represents the novel concept of ballistic resistivity.

Idioma originalInglés
Número de artículo245405
PublicaciónPhysical Review B - Condensed Matter and Materials Physics
Volumen72
N.º24
DOI
EstadoPublicada - 15 dic. 2005
Publicado de forma externa

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