Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility

G. S. Lujan, W. Magnus, B. Sorée, L. Å Ragnarsson, L. Trojman, S. Kubicek, S. De Gendt, M. Heyns, K. De Meyer

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1 Cita (Scopus)

Resumen

The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.

Idioma originalInglés
Páginas (desde-hasta)82-85
Número de páginas4
PublicaciónMicroelectronic Engineering
Volumen80
N.ºSUPPL.
DOI
EstadoPublicada - 17 jun. 2005
Publicado de forma externa
Evento14th Biennial Conference on Insulating Films on Semiconductors -
Duración: 22 jun. 200524 jun. 2005

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