@inproceedings{07b484761a094e3998d0fda0de4b8c6c,
title = "Capacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique",
abstract = "This paper presents the description and the results obtained with a new RFCV system written on python v2.7. which is used to acquire different parameters from MOSFET devices. RFCV is a technique that permits the measurement of capacitances from devices with an oxide thickness up into the nanometric range. Employing this technique, the developed system controls two tools in a synchronized way: A Vector Network Analyzer (VNA) and a Source Measure Unit (SMU) located in a Parameter Analyzer (PA). The obtained results are satisfactory and allow getting an adequate parameter extraction and the corresponding parasitic assessment of devices with channels as short as 34 nm.",
keywords = "Parameter Analyzer, Python, RFCV, Source Measure Unit, Vector Network Analyzer",
author = "Benalcazar, {Diego R.} and Esteban Garzon and Lionel Trojman",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 3rd IEEE Ecuador Technical Chapters Meeting, ETCM 2018 ; Conference date: 15-10-2018 Through 19-10-2018",
year = "2018",
month = dec,
day = "17",
doi = "10.1109/ETCM.2018.8580289",
language = "Ingl{\'e}s",
series = "2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018",
}