The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the principal full-wave rectifier circuits. Rectifier circuits are fundamental part of energy harvester systems. We have chosen the conventional, the gate cross-coupled and the fully cross-coupled rectifiers topologies for circuit simulation. Simulations are carried on Custom-Compiler and HSPICE platform from Synopsys. We measure the average value factor, the ripple voltage and the ripple factor. We obtain that FinFET and Tunnel-FET technologies are the best candidates to work in low voltage. As well, we analyze that the fully cross-coupled topology is the one that best behaves as pure rectifier. In addition, we show that all technologies behave as a combination of rectifier and filter in high frequency.