TY - JOUR

T1 - Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs

AU - Procel, Luis Miguel

AU - Crupi, Felice

AU - Franco, Jacopo

AU - Trojman, Lionel

AU - Kaczer, Ben

N1 - Publisher Copyright:
© 2014 IEEE.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC) degradation. This distribution has been recently proposed for bias temperature instability (BTI) shift and we show that it also successfully describes the CHC behavior. This distribution has the advantage of being described by two physics-based parameters, the average threshold voltage shift produced by a single charge η and the number of stress-induced charged traps Nt. We study the behavior of η and N t on nFETs with different geometries for different CHC stress times. As in the case of BTI, we observe that: 1) during the CHC stress, η is constant and Nt increases at the same rate of Δ Vth and 2) η scales as 1/Area. We show that the density of charged traps induced by CHC stress strongly increases with reducing channel length, in contrast to BTI, where the density of charged traps is independent of the device geometry. The defect analysis enabled by the defect-centric statistics can be used to deepen our understanding of CHC degradation in nanoscale MOSFETs, where the defects are reduced to a numerable level.

AB - The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC) degradation. This distribution has been recently proposed for bias temperature instability (BTI) shift and we show that it also successfully describes the CHC behavior. This distribution has the advantage of being described by two physics-based parameters, the average threshold voltage shift produced by a single charge η and the number of stress-induced charged traps Nt. We study the behavior of η and N t on nFETs with different geometries for different CHC stress times. As in the case of BTI, we observe that: 1) during the CHC stress, η is constant and Nt increases at the same rate of Δ Vth and 2) η scales as 1/Area. We show that the density of charged traps induced by CHC stress strongly increases with reducing channel length, in contrast to BTI, where the density of charged traps is independent of the device geometry. The defect analysis enabled by the defect-centric statistics can be used to deepen our understanding of CHC degradation in nanoscale MOSFETs, where the defects are reduced to a numerable level.

KW - channel hot-carrier

KW - defect-centric distribution

KW - nFET

UR - http://www.scopus.com/inward/record.url?scp=84913584211&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2361342

DO - 10.1109/LED.2014.2361342

M3 - Artículo

AN - SCOPUS:84913584211

SN - 0741-3106

VL - 35

SP - 1167

EP - 1169

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6930741

ER -