DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems

Kevin Vicuna; Luis Miguel Procel; Lionel Trojman; Ramiro Taco

doi:10.1109/LASCAS53948.2022.9789065

DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems

Kevin Vicuna, Luis Miguel Procel, Lionel Trojman, Ramiro Taco

Institut Supérieur d'Électronique de Paris (ISEP)

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

2 Citas (Scopus)

Resumen

This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively evaluated with respect to the single barrier MTJ (SMTJ)-based solution. The comparison is performed at the circuit-level, considering different memory words. Overall, simulation results show that the DMTJ-based NV-TCAM is a good alternative to replace SMTJ-based NV-TCAM, mainly due to the search operation improvement. In particular, for a 144-bit NV-TCAM word operating at a nominal voltage of 1.1 V, the DMTJ-based solution offers improvements in terms of energy and search error rate of 14% and 66%, respectively, while showing similar search delay as the SMTJ-based NV-TCAM.

Idioma original	Inglés
Título de la publicación alojada	2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022
Editorial	Institute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)	9781665420082
DOI	https://doi.org/10.1109/LASCAS53948.2022.9789065
Estado	Publicada - 2022
Evento	13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022 - Santiago, Chile Duración: 1 mar. 2022 → 4 mar. 2022

Serie de la publicación

Nombre	2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022

Conferencia

Conferencia	13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022
País/Territorio	Chile
Ciudad	Santiago
Período	1/03/22 → 4/03/22

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

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10.1109/LASCAS53948.2022.9789065

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Vicuna, K., Procel, L. M., Trojman, L., & Taco, R. (2022). DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems. En 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022 (2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LASCAS53948.2022.9789065

Vicuna, Kevin ; Procel, Luis Miguel ; Trojman, Lionel et al. / DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems. 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022).

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title = "DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems",

abstract = "This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively evaluated with respect to the single barrier MTJ (SMTJ)-based solution. The comparison is performed at the circuit-level, considering different memory words. Overall, simulation results show that the DMTJ-based NV-TCAM is a good alternative to replace SMTJ-based NV-TCAM, mainly due to the search operation improvement. In particular, for a 144-bit NV-TCAM word operating at a nominal voltage of 1.1 V, the DMTJ-based solution offers improvements in terms of energy and search error rate of 14% and 66%, respectively, while showing similar search delay as the SMTJ-based NV-TCAM.",

keywords = "Double-barrier magnetic tunnel junction, Ternary content-addressable memories, energy-efficiency",

author = "Kevin Vicuna and Procel, {Luis Miguel} and Lionel Trojman and Ramiro Taco",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022 ; Conference date: 01-03-2022 Through 04-03-2022",

year = "2022",

doi = "10.1109/LASCAS53948.2022.9789065",

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Vicuna, K, Procel, LM, Trojman, L & Taco, R 2022, DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems. En 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022. 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022, Institute of Electrical and Electronics Engineers Inc., 13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022, Santiago, Chile, 1/03/22. https://doi.org/10.1109/LASCAS53948.2022.9789065

DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems. / Vicuna, Kevin; Procel, Luis Miguel; Trojman, Lionel et al.
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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AU - Vicuna, Kevin

AU - Procel, Luis Miguel

AU - Trojman, Lionel

AU - Taco, Ramiro

PY - 2022

Y1 - 2022

N2 - This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively evaluated with respect to the single barrier MTJ (SMTJ)-based solution. The comparison is performed at the circuit-level, considering different memory words. Overall, simulation results show that the DMTJ-based NV-TCAM is a good alternative to replace SMTJ-based NV-TCAM, mainly due to the search operation improvement. In particular, for a 144-bit NV-TCAM word operating at a nominal voltage of 1.1 V, the DMTJ-based solution offers improvements in terms of energy and search error rate of 14% and 66%, respectively, while showing similar search delay as the SMTJ-based NV-TCAM.

AB - This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively evaluated with respect to the single barrier MTJ (SMTJ)-based solution. The comparison is performed at the circuit-level, considering different memory words. Overall, simulation results show that the DMTJ-based NV-TCAM is a good alternative to replace SMTJ-based NV-TCAM, mainly due to the search operation improvement. In particular, for a 144-bit NV-TCAM word operating at a nominal voltage of 1.1 V, the DMTJ-based solution offers improvements in terms of energy and search error rate of 14% and 66%, respectively, while showing similar search delay as the SMTJ-based NV-TCAM.

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Vicuna K, Procel LM, Trojman L, Taco R. DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems. En 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022). doi: 10.1109/LASCAS53948.2022.9789065

DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems

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