Resumen
This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively evaluated with respect to the single barrier MTJ (SMTJ)-based solution. The comparison is performed at the circuit-level, considering different memory words. Overall, simulation results show that the DMTJ-based NV-TCAM is a good alternative to replace SMTJ-based NV-TCAM, mainly due to the search operation improvement. In particular, for a 144-bit NV-TCAM word operating at a nominal voltage of 1.1 V, the DMTJ-based solution offers improvements in terms of energy and search error rate of 14% and 66%, respectively, while showing similar search delay as the SMTJ-based NV-TCAM.
| Idioma original | Inglés |
|---|---|
| Título de la publicación alojada | 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022 |
| Editorial | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (versión digital) | 9781665420082 |
| DOI | |
| Estado | Publicada - 2022 |
| Evento | 13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022 - Santiago, Chile Duración: 1 mar. 2022 → 4 mar. 2022 |
Serie de la publicación
| Nombre | 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022 |
|---|
Conferencia
| Conferencia | 13th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2022 |
|---|---|
| País/Territorio | Chile |
| Ciudad | Santiago |
| Período | 1/03/22 → 4/03/22 |
ODS de las Naciones Unidas
Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible
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ODS 7: Energía asequible y no contaminante
Huella
Profundice en los temas de investigación de 'DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems'. En conjunto forman una huella única.Citar esto
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