Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

L. Trojman, L. Å Ragnarsson, L. Pantisano, G. S. Lujan, M. Houssa, T. Schram, F. Cubaynes, M. Schaekers, A. Van Ammel, G. Groeseneken, S. De Gendt, M. Heyns

Producción científica: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

8 Citas (Scopus)

Resumen

In this paper the effects from the high-κdielectric thickness and the metal gate deposition technique on the mobility of n-channel MOS transistors are investigated. The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not efficiently compensated by the screening effect from the gate. We correlate this mobility degradation to the reduction observed in a comparison between metal and poly-Si gated MOSFETs. It is shown that the mobility can be improved by using different metals deposition technique, which indicates that the mobility reduction is related to the deposition technique.

Idioma originalInglés
Páginas (desde-hasta)86-89
Número de páginas4
PublicaciónMicroelectronic Engineering
Volumen80
N.ºSUPPL.
DOI
EstadoPublicada - 17 jun. 2005
Publicado de forma externa
Evento14th Biennial Conference on Insulating Films on Semiconductors -
Duración: 22 jun. 200524 jun. 2005

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