Effectiveness of nitridation of hafnium silicate dielectrics: A comparison between thermal and plasma nitridation

Barry J. O'Sullivan, Vidya S. Kaushik, J. L. Everaert, Lionel Trojman, Lars Åke Ragnarsson, Luigi Pantisano, Erika Rohr, Stefan DeGendt, Marc Heyns

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

11 Citas (Scopus)

Resumen

The results of a systematic study on the effects of nitrogen incorporation into (60%Hf/40%Si) hafnium silicate/SiO2 dielectric stacks are presented. Several nitridation methods and processes are compared as a function of the highest performing SiO2 interlayer/high-κ/post-deposition anneal combination on each wafer. It is shown that nitrogen incorporation results in a reduction in not only leakage current density but also maximum drive current, and carrier mobility. The relative increase in leakage current density with measurement temperature is independent of nitridation method or process, which indicates that phase separation may not be a problem for 2-nm hafnium silicate dielectrics. Depending on exact performance requirements, a nitridation step may not be necessary, as its benefits are limited (on ∼2.0 nm equivalent oxide thickness films) to a factor of 2 reduction in leakage current density, with 4% and 7% reduction in mobility and drive current, respectively.

Idioma originalInglés
Páginas (desde-hasta)1771-1775
Número de páginas5
PublicaciónIEEE Transactions on Electron Devices
Volumen54
N.º7
DOI
EstadoPublicada - jul. 2007
Publicado de forma externa

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