Effects of the compliance current in the electroforming process of HfO2-based ReRAM devices

Silvana Guitarra, Lionel Trojman, Laurent Raymond

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

Electroforming is the activation process of ReRAM devices that initiates the resistive switching response by creating filamentary conduction paths in the oxide film. This step is fundamental for the proper operation of the device, and it is controlled by a compliance current (Ic) that prevents the hard dielectric breakdown of the ReRAMs. In this work, we study the influence of this current during the electroforming process and operation in HfO2-based ReRAM devices of different areas. Some parameters from the IV curve were extracted and analyzed to understand how the process could affect the device's performance. We found a maximum value of Ic needed to form the CF independent of the area device that does not provoke significant changes in the electrical behavior.

Idioma originalInglés
Título de la publicación alojada2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9798350311907
DOI
EstadoPublicada - 3 jul. 2023
Evento2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 - Puebla, México
Duración: 3 jul. 20235 jul. 2023

Serie de la publicación

Nombre2023 IEEE Latin American Electron Devices Conference (LAEDC)

Conferencia

Conferencia2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
País/TerritorioMéxico
CiudadPuebla
Período3/07/235/07/23

Huella

Profundice en los temas de investigación de 'Effects of the compliance current in the electroforming process of HfO2-based ReRAM devices'. En conjunto forman una huella única.

Citar esto