Electroforming is the activation process of ReRAM devices that initiates the resistive switching response by creating filamentary conduction paths in the oxide film. This step is fundamental for the proper operation of the device, and it is controlled by a compliance current (Ic) that prevents the hard dielectric breakdown of the ReRAMs. In this work, we study the influence of this current during the electroforming process and operation in HfO2-based ReRAM devices of different areas. Some parameters from the IV curve were extracted and analyzed to understand how the process could affect the device's performance. We found a maximum value of Ic needed to form the CF independent of the area device that does not provoke significant changes in the electrical behavior.