Electrical characteristics of 8-̊A EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

Lars Åke Ragnarsson, Simone Severi, Lionel Trojman, Kevin D. Johnson, David P. Brunco, Marc Aoulaiche, Michel Houssa, Thomas Kauerauf, Robin Degraeve, Annelies Delabie, Vidya S. Kaushik, Stefan De Gendt, Wilman Tsai, Guido Groeseneken, Kristin De Meyer, Marc Heyns

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

33 Citas (Scopus)

Resumen

The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness (EOT) of 8 ̊A, a leakage current of 1.5/cm2 at VG = 1 V, a peak mobility of 190 cm2/V · s, and a drive-current of 815 μA/μm at an off-state current of 0.1 μA/μm for VDD = 1.2 V. Identical gate stacks processed with a 1000-°C spike anneal have a higher peak mobility at 275 cm2/V · s, but a 5-̊A higher EOT and a reduced drive current at 610 μA/μm. The observed performance improvement for the low thermal-budget devices is shown to be mostly related to the lower EOT. The time-to-breakdown measurements indicate a maximum operating voltage of 1.6 V (1.2 V at 125 °C) for a ten-year lifetime, whereas positive-bias temperature-instability measurements indicate a sufficient lifetime for operating voltages below 0.75 V.

Idioma originalInglés
Páginas (desde-hasta)1657-1668
Número de páginas12
PublicaciónIEEE Transactions on Electron Devices
Volumen53
N.º7
DOI
EstadoPublicada - jul. 2006
Publicado de forma externa

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