This work aims to study the degradation of Schottky Barrier Diodes (SBD) with a gated edge termination (GET) under On-state stress conditions in 200V and 650V technologies. After all the stress experiments, a recoverable behavior is observed, which indicates the trapping of charges in pre-existing defects and no creation of new traps. An extensive statistical analysis demonstrates higher reliability and longer lifetime compared to previous work on 200V technology. For 650V technology, variations in the anode as a double layer GET and the use of Al2O3/SiO2 as dielectric were analyzed. Less total degradation was obtained in the second case thanks to compensation between the on-resistance (RON) and the turn-on voltage (VTON) mechanisms. There are some systematic differences in the degradation of the parameters according to the location of the wafer, probably caused by variations related to the process. By using the matched pairs (MP) technique, it has been shown that probability distributions characterized by unique Weibull slopes on the wafer can be obtained and this could allow a better characterization of the intrinsic reliability of these devices.
- Schottky barrier