Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

Ramiro Taco, Itamar Levi, Alex Fish, Marco Lanuzza

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

15 Citas (Scopus)

Resumen

Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as attractive technology that respond to market trends in mobile applications. Digital subthreshold design techniques allow to operate at the minimum energy point, thus leading to considerable energy savings. In this work, the impact of back biasing is analyzed for the subthreshold region with different threshold voltage device options. We show that back biasing is an effective knob to achieve the minimum energy point when either high or low performance is demanded. By applying forward back bias voltage of 1.5 V to low threshold voltage transistors we achieved a frequency boost by 8.23× while maintaining the same consumed energy per cycle. Using regular threshold voltage transistors reversed back biased by 1.5 V, the leakage current was reduced 13.5x. Furthermore, we show that a single p-well approach should be used when no back biasing is needed in the subthreshold regime.

Idioma originalInglés
Título de la publicación alojada2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781479959877
DOI
EstadoPublicada - 2014
Publicado de forma externa
Evento2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel
Duración: 3 dic. 20145 dic. 2014

Serie de la publicación

Nombre2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conferencia

Conferencia2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
País/TerritorioIsrael
CiudadEilat
Período3/12/145/12/14

Huella

Profundice en los temas de investigación de 'Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design'. En conjunto forman una huella única.

Citar esto