Extended exploration of low granularity back biasing control in 28nm UTBB FD-SOI technology

Ramiro Taco, Itamar Levi, Marco Lanuzza, Alexander Fish

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

8 Citas (Scopus)

Resumen

Recently, we proposed a low-granularity back-bias control technique [1] optimized for the ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The technique was preliminary evaluated through the design of a low-voltage 8-bit ripple carry adder (RCA), showing very competitive energy and delay values. In this paper, the characteristics of the low-granularity back-biasing control are explored considering as benchmarks basic logic gates as well as adders with different bit lengths. All the designed circuits were compared to their equivalent dynamic threshold voltage MOSFE T (DTMOS) and conventional CMOS designs. The higher efficiency of low granularity body bias control is emphasized by the single well layout strategy, offered by the 28 nm UTBB FD-SOI technology, thus leading our approach to achieve competitive silicon area occupancy along with significant performance and energy improvements. More precisely, postlayout simulations have demonstrated that circuits designed according the suggested strategy, can achieve a delay reduction of 33% compared to conventional CMOS designs, whereas the energy consumption can be reduced down to 46% compared to DTMOS solutions, for a supply voltage of 0.4V. These results were obtained while maintaining robustness against process and temperature variations.

Idioma originalInglés
Título de la publicación alojadaISCAS 2016 - IEEE International Symposium on Circuits and Systems
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas41-44
Número de páginas4
ISBN (versión digital)9781479953400
DOI
EstadoPublicada - 29 jul. 2016
Publicado de forma externa
Evento2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canadá
Duración: 22 may. 201625 may. 2016

Serie de la publicación

NombreProceedings - IEEE International Symposium on Circuits and Systems
Volumen2016-July
ISSN (versión impresa)0271-4310

Conferencia

Conferencia2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
País/TerritorioCanadá
CiudadMontreal
Período22/05/1625/05/16

Huella

Profundice en los temas de investigación de 'Extended exploration of low granularity back biasing control in 28nm UTBB FD-SOI technology'. En conjunto forman una huella única.

Citar esto