High-κ characterization by RFCV

E. San Andrés, L. Pantisano, P. J. Roussel, M. Toledano-Luque, L. Trojman, S. Severi, S. DeGendt, G. Groeseneken

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Resumen

In this paper we review some advances in High-κ characterization by means of capacitance measurement in the radio-frequency regime (widely known as RFCV). Firstly, we present a robust methodology for the gate impedance parameter extraction in short channel leaky devices, based on measurements from DC to the GHz range and fitting with a robust weighted algorithm. Secondly, we will present a novel RFCV technique which pushes the conventional split-CV measurement to the MHz range. This RF-spht-CV is based on measuring with a 2-port network analyzer, as opposed to the conventional technique which uses a 1-port LCR meter This improved technique is the basis for accurate mobility extraction as studied in the final part of the paper. This methodology takes parasitics fully into account: the RF-split-CV curves obtained are used for the accurate metallurgical channel length extraction. Combination of these L met results with conventional Ids - Vgs curves measured in the linear regime leads to the source and drain resistance calculation After all these corrections have been performed, the mobility is finally calculated.

Idioma originalInglés
Título de la publicación alojadaECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
EditorialElectrochemical Society Inc.
Páginas363-376
Número de páginas14
Edición4
ISBN (versión digital)9781566775700
ISBN (versión impresa)9781566775700
DOI
EstadoPublicada - 2007
Publicado de forma externa
Evento5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, Estados Unidos
Duración: 8 oct. 200710 oct. 2007

Serie de la publicación

NombreECS Transactions
Número4
Volumen11
ISSN (versión impresa)1938-5862
ISSN (versión digital)1938-6737

Conferencia

Conferencia5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
País/TerritorioEstados Unidos
CiudadWashington, DC
Período8/10/0710/10/07

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