TY - JOUR
T1 - High-field transport investigation for 25-nm MOSFETs with 0.64-nm EOT
T2 - Intrinsic performance and parasitic effects
AU - Trojman, Lionel
AU - Pantisano, Luigi
AU - Ragnarsson, Lars Åke
N1 - Funding Information:
Manuscript received July 27, 2011; revised January 20, 2012, March 5, 2012, and March 21, 2012; accepted March 23, 2012. Date of publication May 3, 2012; date of current version June 15, 2012. This work was supported in part by the Universidad San Francisco de Quito (USFQ) under Travel Grant USFQ Fondo Big Bang a Dolly. The review of this paper was arranged by Editor D. Esseni.
PY - 2012
Y1 - 2012
N2 - Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) (EOT = 6.4-8.4 Å) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2-related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices (L MET = 25nm). However, the on-state current (I ON) for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON-performance improvement for CMOS scaling also with new architectures and substrates.
AB - Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) (EOT = 6.4-8.4 Å) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2-related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices (L MET = 25nm). However, the on-state current (I ON) for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON-performance improvement for CMOS scaling also with new architectures and substrates.
KW - Backscattering
KW - HfO
KW - cryogenic temperature
KW - high-field transport
KW - high-κ/metal-gate MOSFET
KW - mobility
KW - on-state current
KW - quasi-ballistic
KW - short-channel devices
KW - ultrathin equivalent oxide thickness (UTEOT)
UR - http://www.scopus.com/inward/record.url?scp=84862678315&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2193402
DO - 10.1109/TED.2012.2193402
M3 - Artículo
AN - SCOPUS:84862678315
SN - 0018-9383
VL - 59
SP - 1856
EP - 1862
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
M1 - 6194299
ER -