Kinetic analysis of the chemical vapor deposition of si from SiCl 4 - H2 for the production of biomorphic Si 3N4 ceramics

Nadja Popovska, Daniela Almeida Streitwieser, Hanadi Ghanem

Producción científica: Contribución a una conferenciaArtículorevisión exhaustiva

Resumen

Biomorphic porous Si3N4 ceramics derived from paper were produced in a three step process consisting of carbonization of the paper preforms to carbon bio-templates, Cb, (1), chemical vapour infiltration (CVI) of Cb with Si from SiCl4/H2 (2) and finally high temperature reaction of the deposited Si with a N 2/H2 mixture to Si3N4 (3). In the present work the CVI step is analyzed with respect to the kinetics of the deposition reaction. For that a series of experiments have been performed on non-porous substrates in order to define regions of parameters, where the overall process is limited by the surface reaction kinetics, which is a precondition for a homogeneous infiltration of the porous Cb template. Furthermore, the deposition rate of Si from SiCl4/H 2 was modelled by CHEMKIN software using a simple power law expression without and with an inhibition term. The results of the simulation of the deposition process with the model, concerning the inhibiting effect of the by-product HCl show good agreement with the experimental data in a wide region of deposition conditions.

Idioma originalInglés
Páginas160-167
Número de páginas8
EstadoPublicada - 2005
Publicado de forma externa
Evento15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Alemania
Duración: 5 sep. 20059 sep. 2005

Conferencia

Conferencia15th European Conference on Chemical Vapor Deposition, EUROCVD-15
País/TerritorioAlemania
CiudadBochum
Período5/09/059/09/05

Huella

Profundice en los temas de investigación de 'Kinetic analysis of the chemical vapor deposition of si from SiCl 4 - H2 for the production of biomorphic Si 3N4 ceramics'. En conjunto forman una huella única.

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