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Magnetic-field effects on strongly localized electrons

  • Ernesto Medina*
  • , Mehran Kardar
  • , Yonathan Shapir
  • , Xiang Rong Wang
  • *Autor correspondiente de este trabajo
  • Massachusetts Institute of Technology
  • University of Rochester

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

58 Citas (Scopus)

Resumen

The magnetic-field response of strongly localized electrons is probed by examining the quantum interference of forward scattering paths. With no disorder, there is a rich structure in the tunneling rate, which is sensitively dependent upon commensurability of the flux per plaquette with the flux quantum. With nonmagnetic impurities, there is a positive magnetoconductance, and the localization length appears to increase as B1/2. With impurities breaking time-reversal symmetry, the distribution of tunneling rates is not changed by the magnetic field.

Idioma originalInglés
Páginas (desde-hasta)1816-1819
Número de páginas4
PublicaciónPhysical Review Letters
Volumen64
N.º15
DOI
EstadoPublicada - 1990
Publicado de forma externa

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