New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies

Adriana Arevalo, Romain Liautard, Daniel Romero, Lionel Trojman, Luis Miguel Procel

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

5 Citas (Scopus)

Resumen

The purpose of this work is to point out the main differences between a Static Random-Access Memory (SRAM) cells implemented by using Tunnel FET (TFET) and FinFET technologies. We have compared the behavior of SRAM cells implemented in both technologies cells for a supply voltage range from 0.4V to 1.2V. Furthermore, for our study, we have chosen different SRAM cell topologies, such as 6T, 8T, 9T and 10T. Therefore, we have simulated all of these topologies for both technologies and extracted the Static Noise Margins (SNM) for the reading and writing processes. In addition, we have determined the power consumption in order to find the best trade-off between stability and power. By analyzing these results, we have determined the best topology for each technology. Finally, we have compared these best topologies for each technology in order to perform a study of advantages and shortcomings. Our results show more advantages using TFET technology instead of FinFET one.

Idioma originalInglés
Título de la publicación alojadaProceedings - 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019
EditorialAssociation for Computing Machinery, Inc
ISBN (versión digital)9781450368445
DOI
EstadoPublicada - 26 ago. 2019
Evento32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019 - Sao Paulo, Brasil
Duración: 26 ago. 201930 ago. 2019

Serie de la publicación

NombreProceedings - 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019

Conferencia

Conferencia32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019
País/TerritorioBrasil
CiudadSao Paulo
Período26/08/1930/08/19

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