Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement

A. Shickova, N. Collaert, P. Zimmerman, M. Demand, E. Simoen, G. Pourtois, A. De Keersgieter, L. Trojman, I. Ferain, F. Leys, W. Boullart, A. Franquet, B. Kaczer, M. Jurczak, H. Maes, G. Groeseneken

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16 Citas (Scopus)

Resumen

In this work, we propose a new, effective, and cost-efficient method of introducing Fluorine into metal/Hf-based gate stack of planar and multi-gate devices (MuGFET), resulting in significant improvements in both NBTI and PBTI characteristics. The key advantage of this method is that it uses the SF 6-based metal gate etch for F introduction, requiring no extra implantation steps. In addition to the significant BTI improvement with the novel method, we also demonstrate, for the first time, better Vth control and increased drive current on MuGFET devices.

Idioma originalInglés
Número de artículo4339748
Páginas (desde-hasta)112-113
Número de páginas2
PublicaciónDigest of Technical Papers - Symposium on VLSI Technology
DOI
EstadoPublicada - 2007
Publicado de forma externa
Evento2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japón
Duración: 12 jun. 200714 jun. 2007

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