ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-state stress conditions is studied for a 650 V GaN-on-Si technology. Reliability metric techniques previously used in MOS-HEMTs are applied in this work due to a similar MIS gate stack architecture in GET-SBDs. Here, the density of traps is analyzed in GET structures where the dielectric is either Si3N4 (nitride-based) or a stack of Al2O3/SiO2 (oxide-based). Statistical analysis across two wafers indicates some systematic differences in turn-on voltage degradation depending on wafer location, likely caused by process-related variations. Under 1000 s stress time and ON-state voltage, the number of trapped charges in nitride-based dielectric devices keeps increasing. This suggests an ongoing dielectric degradation. On the other hand, Al2O3/SiO2 dielectric devices with an Al-based interfacial layer (IL) exhibit less process-induced variability across the wafer along with a lower density of trapped charges compared with nitride-based dielectric diodes under the same stress conditions suggesting better reliability and process improvement.

Idioma originalInglés
Título de la publicación alojada2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781728168937
DOI
EstadoPublicada - mar. 2021
Evento2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Virtual, Monterey, Estados Unidos
Duración: 21 mar. 202124 mar. 2021

Serie de la publicación

NombreIEEE International Reliability Physics Symposium Proceedings
Volumen2021-March
ISSN (versión impresa)1541-7026

Conferencia

Conferencia2021 IEEE International Reliability Physics Symposium, IRPS 2021
País/TerritorioEstados Unidos
CiudadVirtual, Monterey
Período21/03/2124/03/21

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