On the impact of defects close to the gate electrode on the low-frequency 1/f noise

Paolo Magnone, Luigi Pantisano, Felice Crupi, Lionel Trojman, Calogero Pace, Gino Giusi

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

9 Citas (Scopus)

Resumen

This letter studies the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current. Defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate. Contrary to the common belief that defects at the Si/SiO2 interface are the dominant effect on 1/f noise, defects at the interface and fluctuations in the poly-Si charge are also important.

Idioma originalInglés
Páginas (desde-hasta)1056-1058
Número de páginas3
PublicaciónIEEE Electron Device Letters
Volumen29
N.º9
DOI
EstadoPublicada - 2008
Publicado de forma externa

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